Rapid Thermal Annealing oven RTP-100
Rapid Thermal Annealing Vacuum oven for up to 4“ wafer size
The RTP oven is perfect for
- a wide variety of applications in Semiconductor manufacturing
- Dopant activation
- Thermal oxidation
- Metal reflow and chemical vapor deposition
Rapid Thermal Annealing oven RTP-150
Rapid Thermal Annealing Vacuum oven for up to 6“ wafer size
The RTP oven is perfect for
- a wide variety of applications in Semiconductor manufacturing
- Dopant activation
- Thermal oxidation
- Metal reflow and chemical vapor deposition
Rapid Thermal Annealing oven RTP-200
Rapid Thermal Annealing Vacuum oven for up to 8“ wafer size
The RTP oven is perfect for
- a wide variety of applications in Semiconductor manufacturing
- Dopant activation
- Thermal oxidation
- Metal reflow and chemical vapor deposition
Vacuum Process Oven VPO-300
Vacuum Process Oven for up to 12“ wafer size
The VPO-1000-300 vacuum process oven is suitable for performing different processes:
- Rapid heating up of Si wafers (using quartz glass holder)
- Rapid heating up of GaAs, GaN and sapphire substrates (using graphite susceptor)
- The customer is in charge of process development and evaluation. UniTemp can consult the customer in this case.
Technical Specifications
| Rapid Thermal Annealing ovens - overview | ||||
| Vacuum up to 1x10-3 hPa | RTP-100 | RTP-150 | RTP-200 | VPO-300 |
| Vacuum up to 5x10-6 hPa | RTP-100-HV | RTP-150-HV | RTP-200-HV | VPO-300-HV |
| max. Wafer size | 100 mm dia or | 150 mm dia or | 200 mm dia or | 300 mm dia or |
| Graphite susceptor (i.d.) | 106 x 106 x 1.75 mm³ | 157 x 157 x 2 mm³ | 206 x 206 x 1 mm³ | 206 x 206 x 1 mm³ |
| Graphite crucible (i.d.) | Dia 90 mm x 8 mm | 134 x 134 x 11 mm³ | 201 x 201 | N/A |
| max. Temperature | 1000 °C (1500 °C) | 1000 °C (1200 °C) | 1000 °C (1200 °C) | 1000 °C (1200 °C) |
| Max. ramp up rate (applied to single SI wafer) | 150 K/sec (200 K/sec) | 75 K/sec (150 K/sec) | 50 K/sec (100 K/sec) | 40 K/sec |
| Max. cool Down rate 1000 °C > 400 °C | up to 200 K/min | up to 200 K/min | up to 200 K/min | up to 200 K/min |
| IR- Infrared lamps | 18 (20 kW) | 24 (21 kW) | 24 (21 kW) | 24 (2x18 kW) |
| Top and bottom heating (selectable) | yes | yes | yes | yes |
| Zone Control | yes | yes | yes | yes |
| Process Gas lines | MFC (max. 4 pcs). | MFC (max. 4 pcs). | MFC (max. 4 pcs). | MFC (max. 4 pcs). |