A fully integrated solution for millimeter-scale delayering of both logic and memory semiconductor devices. The ChipMill integrates signals from multiple detectors via an artificial intelligence feedback control algorithm to adjust milling parameters in real time. The result is the precise removal of device layers and a highly planar surface.
Description
- Nanometer flatness of the prepared area
- Milling area up to 10 x 10 mm
- Automated sample height detection
- User-friendly interface for the setup of milling parameters and display of images and analytical data
- On-device touchscreen for managing sample insertion and removal
- End-pointing by time, chip structure, or chemical composition
- Components: Ion source
- Optical camera
- Electron beam column
- Secondary electron detector (SED)
- Backscattered electron (BSE) detector
- Energy dispersive X-ray spectrometer (EDS)
- Secondary ion mass spectrometer (SIMS)
The sample preparation breakthrough of the century
The Model 1064 ChipMill is a fully integrated solution for large-scale delayering – up to a 10 x 10 mm milling area – of both memory and logic semiconductor devices. Compared to all other methods, the ChipMill produces the flattest surface over the largest area. The ChipMill’s artifical intelligence automatically adjusts milling parameters to yield nanometer flatness within the prepared area.
Specifications
| Ion source | Type: Hot filament electron impact Beam energy: 100 eV to 10 keV; continuously adjustable in 5 eV increments Beam diameter: 0.5 to 2 mm; adjustable, dependent upon energy level Maximum current: 10 μA Current density: 5 mA/cm2 (10 µA in 0.5 mm beam) Working distance: 25 to 100 mm Raster range: 10 mm Beam control: X-Y electrostatic deflection Filament lifetime: 200 hours Filament serviceability: Easy to change Cooling: Air |
| Load lock | Pump down time: < 60 seconds Venting time: < 20 seconds |
| Milling uniformity | For a 10 mm diameter milling area: surface planarity is better than 50 nm |
| User interface | User-friendly interface for the setup of milling parameters and display of images and analytical data A touchscreen located near the load lock facilitates sample exchange Stack light indicator allows the determination of milling operation status from a distance Remote operation |
| Automatic termination | Milling operations can be terminated by time, chip structure, or chemical composition |
| Sample stage | Milling plane: Established by automatic height detection Milling angle range: 0 to 10° Rotation: 360° continuous Rocking: 0 to 179°; adjustable in 1° increments Sample size: 15 x 15 mm, 3 mm or less thickness Milling area: 10 mm diameter |
| Sample image acquisition | Camera Field of view: 1 cm Electron beam column • Accelerating voltage range: 0.5 to 10 kV • Resolution: 100 nm • Working distance: 16 mm |
| Detectors | Secondary electron detector (SED) Backscatter electron (BSE) detector Energy dispersive X-ray spectroscopy (EDS) detector Secondary ion mass spectrometry (SIMS) detector |
| Process gas | Type: Argon Purity: ≥ 99.995% Flow rate: Adjustable ~0.1 sccm Nominal pressure: 15 to 30 psi |
| Control gas | Type: Argon, dry N2, or clean dry air Nominal pressure: 55 psi, ±5 psi |
| Vacuum system | Two-stage pumping: Oil-free diaphragm pump and turbo- molecular pump Vacuum detector: Pirani and cold cathode full-range gauge |